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Product Data Sheet
April 3, 2003
2 - 18 GHz Low Noise Amplifier
TGA8344-SCC
Key Features and Performance
* * * * * * 2 to 18 GHz Frequency Range Typical 4 dB Noise Figure at Midband 16 dBm Typical Output Power at 1 dB Gain Compression 19 dB Typical Gain Typical Input SWR 1.5:1 and Output SWR 1.6:1 3.9878 x 3.810 x 0.1016 mm (0.1570 0.150 x 0.0040 in.)
Description
The TriQuint TGA8344-SCC features two cascaded monolithic low-noise distributed amplifiers with on-chip bias operating from 2 to 18 GHz. This die offers the advantage of high gain, typically 19 dB, in compact die size with simplified biasing configuration. Noise figure is typically 4 dB. The two cascade amplifiers have eighteen 122 um gatewidth FETs providing 16 dBm of output power at 1 dB gain compression. Input return loss is typically 14 dB from 2 to 18 GHz and output return loss is typically 13 dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA8344-SCC small size and high gain make it suitable for use in a variety of wide-band electronic commercial and warfare systems. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression wire-bonding processes. The TGA8344-SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8344-SCC
TYPICAL SMALL-SIGNAL POWER GAIN
TYPICAL NOISE FIGURE
TYPICAL OUTPUT POWER P1dB
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8344-SCC
TYPICAL RETURN LOSS
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8344-SCC
TABLE I MAXIMUM RATINGS SYMBOL VD V
+ + -
PARAMETER DRAIN SUPPLY VOLTAGE POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY VOLTAGE RANGE WITH RESPECT TO NEGATIVE SUPPLY VOLTAGE
VALUE 9V 12V 0V to 13V 0V to -13V -5V to 0V -5V to 4V 376mA -8.73mA 5.3W 23dBm 150 C 320 C -65 to 150 C
0 0 0
V -V
VCTRL - V V
-
+
POSITIVE SUPPLY VOLTAGE WITH RESPECT TO GAIN CONTROL VOLTAGE NEGATIVE SUPPLY VOLTAGE RANGE GAIN CONTROL VOLTAGE RANGE POSITIVE SUPPLY CURRENT NEGATIVE SUPPLY CURRENT POWER DISSIPATION, AT (OR BELOW) 25C * BASE-PLATE TEMPERATURE INPUT CONTINUOUS WAVE POWER OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
VCTRL I
+ -
I
PD PIN TCH TM TSTG
**
Ratings over channel temperature range, TCH (unless otherwise noted) Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Specifications" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. *For operation above 25C base-plate temperature, derate linearly at the rate of 11.2mW/C. ** Operating channel temperature, TCH, directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet TGA8344-SCC
TABLE II DC PROBE TESTS (100%) (TA = 25 C Nominal) NOTES SYMBOL TEST CONDITIONS 3/ MIN 2/ 2/ 1/,2/ 1/,2/ 1/,2/ 1/,2/ 1/,2/ IDSS1-9 GM1-9 |VBVGS1-9| |VP1-9, 1| |VP1-9, 2| |VP10-18, 1| |VP10-18, 2| STD STD STD STD STD STD STD 110 186 6 0.5 0.5 0.5 0.5 LIMITS MAX 307 340 30 1.8 1.8 1.8 1.8 mA mS V V V V V UNITS
1/ 2/ 3/
VBVGS1-9, VP1-9, and VP10-18 are negative Subscripts are referred to Q1 through Q18 accordingly. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer).
STD - Standard Test Conditions (see Table IV for definitions)
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet TGA8344-SCC
TABLE III RF CHARACTERISTICS (TA = 25C Nominal) NOTE TEST MEASUREMENT CONDITIONS VD = 8V, I+ = 120 5% mA 1/ MIN 2/ 2/ SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE NOISE FIGURE 2 - 18 GHz 2 - 16 GHz 18 GHz 2 - 18 GHz 2 - 18 GHz 2 - 14 GHz 16 - 18 GHz 14 13 12 -7.7 -7.7 5.7 7 MAX dB dBm dBm dB dB dB dB VALUE UNITS
2/ 2/ 2/
1/
2/
VG2 (approximately 1.5V) is provided through an on chip voltage divider.
RF probe data is taken at 2 GHz steps
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8344-SCC
Table IV AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS
FET Parameters IDSS : Maximum drain current (IDS) with gate voltage (VGS) at zero volts. Test Conditions VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V up to a maximum of 3.5 V in search of the maximum value of IDS; voltage for IDSS is recorded as VDSP. For all material types, VDS is swept between 0.5 V and VDSP in search of the maximum value of Ids. This maximum IDS is recorded as IDS1. For Intermediate and Power material, IDS1 is measured at VGS = VG1 = -0.5 V. For Low Noise, HFET and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/mm forced into gate, gate-to-drain voltage (VGD) measured is VBDGD and recorded as BVGD; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-tosource voltage (VGS) measured is VBDGS and recorded as BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source.
Gm : Transconductance;
(I
DSS
- IDS1 VG1
)
VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of gate width. VBVGD : Breakdown Voltage, Gate-to-Drain; gate-todrain breakdown current (IBD) = 1.0 mA/mm of gate width.
VBVGS : Breakdown Voltage, Gate-to-Source; gate-tosource breakdown current (IBS) = 1.0 mA/mm of gate width.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7
Product Data Sheet TGA8344-SCC
TYPICAL S-PARAMETERS
F re que nc y (GHz) M AG
S 11 ANG() M AG
S 21 ANG() M AG
S 12 ANG() M AG
S 22 ANG()
GAIN (dB )
1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0 7.4 7.8 8.2 8.6 9.0 9.4 9.8 10.2 10.6 11.0 11.4 11.8 12.2 12.6 13.0 13.4 13.8 14.2 14.6 15.0 15.4 15.8 16.2 16.6 17.0 17.4
0.63 0.52 0.43 0.37 0.33 0.29 0.26 0.23 0.20 0.17 0.13 0.09 0.06 0.05 0.08 0.11 0.14 0.16 0.16 0.18 0.20 0.21 0.21 0.20 0.19 0.17 0.13 0.09 0.05 0.00 0.03 0.06 0.09 0.12 0.13 0.14 0.15 0.14 0.11 0.11 0.09 0.05
-79 -103 -123 -140 -158 -175 167 147 130 109 86 57 11 -59 -109 -139 -162 179 166 155 140 123 107 92 74 56 38 18 -8 -131 143 132 126 104 91 80 65 43 32 11 -28 -84
22.70 20.49 16.92 15.01 13.76 12.85 12.00 11.03 10.32 9.68 9.45 9.69 10.25 10.89 11.36 11.51 11.36 10.94 10.56 10.29 9.94 9.55 9.34 9.19 9.00 9.16 9.53 9.84 10.28 10.41 10.38 10.15 9.72 9.35 8.86 8.69 8.54 8.44 8.45 9.00 9.26 9.25
38 -46 -95 -133 -167 161 130 100 73 47 23 -2 -28 -57 -88 -119 -150 180 151 122 93 66 38 11 -16 -42 -70 -99 -130 -162 166 134 102 72 42 13 -17 -47 -76 -107 -142 -176
0.000 0.000 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.001 0.001 0.001 0.001 0.001 0.002 0.003 0.003 0.003 0.004 0.003 0.002 0.001 0.001 0.001 0.001 0.002 0.003 0.004 0.004 0.004 0.004 0.003 0.002 0.001 0.000 0.001 0.002 0.004 0.008 0.009 0.008 0.008
155 -153 157 134 114 111 105 109 90 59 71 115 149 159 155 141 131 112 103 89 74 84 109 155 153 -174 -178 166 155 143 127 119 97 78 -93 -96 -94 -90 -120 -153 -179 159
0.32 0.27 0.30 0.31 0.31 0.30 0.28 0.26 0.24 0.22 0.19 0.16 0.12 0.10 0.09 0.10 0.13 0.15 0.17 0.20 0.23 0.24 0.24 0.23 0.21 0.17 0.12 0.07 0.08 0.11 0.14 0.17 0.21 0.25 0.27 0.27 0.25 0.23 0.18 0.16 0.16 0.16
118 24 -24 -57 -85 -110 -135 -160 -180 151 124 94 58 15 -38 -83 -115 -140 -159 -176 165 145 126 105 83 56 22 -25 -92 -140 -165 176 160 140 117 93 65 32 -6 -50 -101 -144
27.1 26.2 24.6 23.5 22.8 22.2 21.6 20.8 20.3 19.7 19.5 19.7 20.2 20.7 21.1 21.2 21.1 20.8 20.5 20.2 20.0 19.6 19.4 19.3 19.1 19.2 19.6 19.9 20.2 20.3 20.3 20.1 19.7 19.4 18.9 18.8 18.6 18.5 18.5 19.1 19.3 19.3
V D = 5 V, I D = 120 mA, TA = 25oC The reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram." The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
8
Product Data Sheet TGA8344-SCC
THERMAL DATA
P AR AM ETER
TES T C ONDITIONS
F ET
M M IC
UNIT
R J C R J C
The rma l res is ta nc e, c ha nne l-to-backs ide The rma l res is ta nc e, c ha nne l-to-backs ide
25 C Bas e , 31.83 C Channe l*, ID = 0.12 A, V= 5, P D = 0.6 W** 100 C Bas e, 108.6 C Cha nnel*, ID = 0.12 A, V= 5, P D = 0.6 W**
205 258
11.4 14.4
C/W C/W
* Center of FET of either TGA8344 half-amplifier. ** Total power dissipation for TGA8344: divide by 18 to obtain the single-FET power dissipation.
EQUIVALENT SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8344-SCC
RECOMMENDED ASSEMBLY DIAGRAM
RF connections: Bond using two 1.0-mil diameter, 20 to 30-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. V- = V 1 - = V 2 Two on-chip to on-chip wire bonds are needed for bond pads 3 and 13. Close placement of external components is essential to stability. Refer to TriQuint's Gallium Arsenide Products Designers' Information on our website under Application Information.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
10
Product Data Sheet TGA8344-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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